S DU/D50N03L
1.15
1.10
1.15
V
DS =V G S
ID=250uA
1.10
I
D=250uA
1.05
1.00
0.95
0.90
1.05
1.00
0.95
0.90
0.85
0.85
0.80
6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
40
60
V
DS =10V
50
40
30
10
1.0
0.1
20
10
0
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
300
200
10
V
DS =10V
100
8
6
t
i
I
D=50A
1
m
m
i
s
L
)
N
O
(
1
R DS
0
m
s
1
1
0
0
m
s
10
s
D
C
4
V G S =10V
S ingle P ulse
T c=25 C
2
0
1
0.5
0.1
1
10
30 60
0
8
16 24 32 40 48 56 64
Qg, T otal G ate C harge (nC )
V
DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
