S DM9926
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
5
Diode F orward Voltage
V
S D
V
G S = 0V, Is =1.7A
1.2
0.72
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
25
20
15
10
25
-55 C
25 C
V
G S =10,9,8,7,6,5,4,3V
20
15
Tj=125 C
10
5
5
0
VG S =1.5V
5 6
0
0.0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
2.2
1.8
V
G S =4V
=6A
2500
I
D
2000
1500
1.4
1.0
C iss
1000
0.6
0.2
0
500
0
C oss
C rss
10
0
2
4
6
8
12
-50 -25
0
25
50
100 125
Tj( C )
75
VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
