2N7336
IRFG6110
ELECTRICAL CHARACTERISTICS FOR P-CHANNEL (T
= 25°C unless otherwise stated)
amb
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
BV
V
= 0
I = –1mA
–100
V
DSS
GS
D
∆BV
∆T
Reference to 25°C
DSS
0.098
V/°C
I = –1mA
J
D
Static Drain – Source On–State
V
V
V
V
V
= –10V
= –10V
I = –0.50A
1.4
Ω
GS
GS
DS
DS
GS
D
R
DS(on)
1
Resistance
I = –0.75A
1.73
D
1
V
g
Gate Threshold Voltage
= V
I = –250µA
–2
–4
V
GS(th)
GS
D
(Ω)
Forward Transconductance
≥ –15V
I
= –0.50A
DS
0.67
S(Ω
fs
= 0
V
= 0.8V
–25
DS
DSS
I
µA
Zero Gate Voltage Drain Current
DSS
T = 125°C
–250
–100
–100
J
I
I
V
V
= -20V
= 20V
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
GSS
GS
nA
GSS
GS
C
C
C
V
V
= 0
200
85
iss
GS
DS
= –25V
pF
nC
Output Capacitance
oss
rss
f = 1MHz
30
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
Q
t
V
V
= –10V
I = –0.75A
15
7
g
GS
DS
D
= 0.5V
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
gs
gd
DS
8
30
60
40
40
d(on)
V
= –50V
DD
t
t
t
r
I = –0.75A
ns
D
Turn–Off Delay Time
Fall Time
d(off)
f
R = 24Ω
G
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
–0.75
–3
Continuous Source Current
S
A
V
2
Pulse Source Current
SM
I = –0.75A
T = 25°C
S
J
V
t
–5.5
Diode Forward Voltage
SD
V
= 0
GS
I = –0.75A
T = 25°C
200
90
ns
Reverse Recovery Time
rr
F
J
Q
t
d / d ≤ 100A/µs V ≤ –50V
µC
Reverse Recovery Charge
Forward Turn–On Time
rr
i
t
DD
Negligible
on
PACKAGE CHARACTERISTICS
L
L
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
4.0
6.0
D
nH
S
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
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