Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
-40 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
OPR
T
Wave solder temperature (see page 8 for reflow solder profile)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
D
A
Derate above 25°C
2.94
EMITTER
I
DC/Average Forward Input Current
Reverse Input Voltage
60
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3
A
F
P
LED Power Dissipation @ T = 25°C
120
1.41
mW
mW/°C
D
A
Derate above 25°C
DETECTOR
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
30
70
V
V
CEO
CBO
ECO
7
V
P
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
D
A
Derate above 25°C
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Min.
Typ.* Max. Unit
V
Input Forward Voltage
I = 10mA
1.18
1.50
10
V
F
F
I
Reverse Leakage Current
V
= 6.0V
0.001
µA
R
R
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I
I
= 1.0mA, I = 0
30
70
7
100
120
10
V
V
CEO
CBO
ECO
C
F
= 100µA, I = 0
C
F
I = 100µA, I = 0
V
E
F
I
I
V
= 10V, I = 0
1
50
20
nA
nA
pF
CEO
CBO
CE
CB
CE
F
V
V
= 10V
C
= 0V, f = 1 MHz
8
CE
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min. Typ.* Max.
Units
V
R
C
Input-Output Isolation Voltage
Isolation Resistance
f = 60Hz, t = 1 sec
7500
Vac(pk)
Ω
ISO
ISO
ISO
11
V
V
= 500 VDC
10
I-O
I-O
Isolation Capacitance
= &, f = 1MHz
0.2
2
pF
*Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
2
ROCHESTER [ Rochester Electronics ]
