GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N37
4N26
H11A1
4N27
H11A2
4N28
H11A3
4N35
H11A4
4N36
H11A5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ*
Max
Unit
EMITTER
Input Forward Voltage
(I = 10 mA)
V
1.18
1.50
10
V
F
F
Reverse Leakage Current
DETECTOR
(V = 6.0 V)
I
0.001
µA
R
R
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
(I = 1.0 mA, I = 0)
BV
BV
BV
30
70
7
100
120
10
V
V
C
F
CEO
CBO
ECO
(I = 100 µA, I = 0)
C
F
(I = 100 µA, I = 0)
V
E
F
(V = 10 V, I = 0)
I
I
1
50
20
nA
nA
pF
CE
F
CEO
CBO
(V = 10 V)
CB
(V = 0 V, f = 1 MHz)
C
8
CE
CE
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions Symbol Min
Typ*
Max
Units
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec)
(V = 500 VDC)
5300
7500
Vac(rms)
Vac(pk)
Ω
Input-Output Isolation Voltage
V
ISO
11
Isolation Resistance
Isolation Capacitance
R
C
10
I-O
ISO
ISO
(V = &, f = 1 MHz)
0.5
0.2
pF
I-O
(‘-M’ White Package)
2
pF
Note
* Typical values at T = 25°C
A
© 2005 Fairchild Semiconductor Corporation
Page 3 of 15
6/15/05
ROCHESTER [ Rochester Electronics ]
