Electrical Characteristics (Continued) (T = 25°C unless otherwise specified)
A
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio,
Collector to Emitter
I = 10mA, V = 10V
4N35M, 4N36M,
4N37M
100
%
F
CE
H11A1M
H11A5M
50
30
20
4N25M, 4N26M
H11A2M, H11A3M
4N27M, 4N28M
H11A4M
10
40
I = 10mA, V = 10V,
4N35M, 4N36M,
4N37M
F
CE
T = -55°C
A
I = 10mA, V = 10V,
4N35M, 4N36M,
4N37M
40
F
CE
T = +100°C
A
V
Collector-Emitter
Saturation Voltage
I = 2mA, I = 50mA
4N25M, 4N26M,
4N27M, 4N28M,
0.5
0.3
0.4
V
CE (SAT)
C
F
I = 0.5mA, I = 10mA
4N35M, 4N36M,
4N37M
C
F
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
AC CHARACTERISTICS
T
Non-Saturated
Turn-on Time
I = 10mA, V = 10V,
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
2
µs
ON
F
CC
R = 100Ω (Fig. 11)
L
I = 2mA, V = 10V,
4N35M, 4N36M,
4N37M
2
2
10
10
µs
µs
C
CC
R = 100Ω (Fig. 11)
L
T
Turn-off Time
I = 10mA, V = 10V,
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
OFF
F
CC
R = 100Ω (Fig. 11)
L
I = 2mA, V = 10V,
4N35M, 4N36M,
4N37M
2
C
CC
R = 100Ω (Fig. 11)
L
* Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
3
ROCHESTER [ Rochester Electronics ]
