2N7002K, 2V7002K
TYPICAL CHARACTERISTICS
30
5
C
iss
T = 25°C
J
I
D
= 0.2 A
4
3
2
20
10
0
T = 25°C
J
V
GS
= 0 V
C
oss
1
0
C
rss
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
10
1
I
= 250 mA
D
V
GS
= 0 V
T = 85°C
J
T = 25°C
J
0.1
0.01
0.4
0.6
0.8
1.0
1.2
−50 −25
0
25
50
75
100
125 150
V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Threshold Voltage with
Temperature
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