Preferred Device
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
http://onsemi.com
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
• 300 A Surge Current Capability
• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(1)
*Peak Repetitive Off–State Voltage
V
Volts
DRM,
(Gate Open, Sine Wave 50 to 60 Hz,
V
RRM
T = 25 to 125°C)
J
4
2N6504
2N6505
2N6507
2N6508
2N6509
50
100
400
600
800
On-State RMS Current
(180° Conduction Angles; T = 85°C)
I
25
A
A
A
1
T(RMS)
2
C
3
Average On-State Current
(180° Conduction Angles; T = 85°C)
I
T(AV)
16
TO–220AB
CASE 221A
STYLE 3
C
Peak Non-repetitive Surge Current
8.3 ms
I
TSM
300
(1/2 Cycle, Sine Wave 60 Hz, T = 85°C)
1.5 ms
J
PIN ASSIGNMENT
Cathode
350
20
1
2
3
4
Forward Peak Gate Power
P
Watts
Watts
A
GM
Anode
(Pulse Width ≤ 1.0 µs, T = 85°C)
C
Gate
Forward Average Gate Power
P
0.5
2.0
G(AV)
Anode
(t = 8.3 ms, T = 85°C)
C
Forward Peak Gate Current
I
GM
(Pulse Width ≤ 1.0 µs, T = 85°C)
C
ORDERING INFORMATION
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to
+125
°C
J
Device
2N6504
Package
TO220AB
TO220AB
TO220AB
TO220AB
TO220AB
Shipping
500/Box
500/Box
500/Box
500/Box
500/Box
T
–40 to
+150
°C
stg
2N6505
2N6507
2N6508
2N6509
*Indicates JEDEC Registered Data
(1) V
DRM
and V for all types can be applied on a continuous basis. Ratings
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 3
2N6504/D
ROCHESTER [ Rochester Electronics ]
