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2N6426RLRA 参数 Datasheet PDF下载

2N6426RLRA图片预览
型号: 2N6426RLRA
PDF下载: 下载PDF文件 查看货源
内容描述: [500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN]
分类和应用: 放大器晶体管
文件页数/大小: 6 页 / 922 K
品牌: ROCHESTER [ Rochester Electronics ]
 浏览型号2N6426RLRA的Datasheet PDF文件第1页浏览型号2N6426RLRA的Datasheet PDF文件第2页浏览型号2N6426RLRA的Datasheet PDF文件第4页浏览型号2N6426RLRA的Datasheet PDF文件第5页浏览型号2N6426RLRA的Datasheet PDF文件第6页  
2N6426*, 2N6427  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage, (Note 2)  
V
V
40  
40  
12  
Vdc  
Vdc  
(BR)CEO  
(I = 10 mAdc, V  
= 0)  
C
BE  
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 25 Vdc, I = 0)  
I
1.0  
50  
50  
Adc  
nAdc  
nAdc  
CES  
CBO  
CE  
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
B
I
CB  
Emitter Cutoff Current  
(V = 10 Vdc, I = 0)  
E
I
EBO  
EB  
C
ON CHARACTERISTICS  
DC Current Gain, (Note 2)  
h
FE  
(I = 10 mAdc, V  
= 5.0 Vdc)  
2N6426  
2N6427  
20,000  
10,000  
200,000  
100,000  
C
CE  
(I = 100 mAdc, V  
= 5.0 Vdc)  
= 5.0 Vdc)  
2N6426  
2N6427  
30,000  
20,000  
300,000  
200,000  
C
CE  
(I = 500 mAdc, V  
2N6426  
2N6427  
20,000  
14,000  
200,000  
140,000  
C
CE  
CollectorEmitter Saturation Voltage  
(I = 50 mAdc, I = 0.5 mAdc)  
V
Vdc  
CE(sat)  
0.71  
0.9  
1.2  
1.5  
C
B
(I = 500 mAdc, I = 0.5 mAdc  
C
B
BaseEmitter Saturation Voltage  
(I = 500 mAdc, I = 0.5 mAdc)  
V
1.52  
2.0  
Vdc  
Vdc  
BE(sat)  
C
B
BaseEmitter On Voltage  
(I = 50 mAdc, V = 5.0 Vdc)  
V
1.24  
1.75  
BE(on)  
C
CE  
SMALLSIGNAL CHARACTERISTICS  
Output Capacitance  
C
5.4  
10  
7.0  
15  
pF  
pF  
kꢂ  
obo  
(V  
CB  
= 10 Vdc, I = 0, f = 1.0 MHz)  
E
Input Capacitance  
(V = 1.0 Vdc, I = 0, f = 1.0 MHz)  
C
ibo  
EB  
Input Impedance  
(I = 10 mAdc, V  
C
h
ie  
fe  
fe  
= 5.0 Vdc, f = 1.0 kHz)  
CE  
2N6426  
2N6427  
100  
50  
2000  
1000  
C
SmallSignal Current Gain  
(I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz)  
h
2N6426  
2N6427  
20,000  
10,000  
C
CE  
CurrentGain High Frequency  
|h  
|
(I = 10 mAdc, V  
= 5.0 Vdc, f = 100 MHz)  
= 5.0 Vdc, f = 1.0 kHz)  
2N6426  
2N6427  
1.5  
1.3  
2.4  
2.4  
C
CE  
CE  
Output Admittance  
(I = 10 mAdc, V  
C
h
1000  
mhos  
oe  
Noise Figure  
NF  
3.0  
10  
dB  
(I = 1.0 mAdc, V  
= 5.0 Vdc, R = 100 k, f = 1.0 kHz)  
S
C
CE  
2. Pulse Test: Pulse Width v 300 s; Duty Cycle v 2.0%.  
http://onsemi.com  
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