2N6426*, 2N6427
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage, (Note 2)
V
V
40
40
12
−
−
−
−
−
−
−
−
−
Vdc
Vdc
(BR)CEO
(I = 10 mAdc, V
= 0)
C
BE
Collector−Base Breakdown Voltage
(I = 100 ꢁAdc, I = 0)
(BR)CBO
C
E
Emitter−Base Breakdown Voltage
(I = 10 ꢁAdc, I = 0)
V
−
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 25 Vdc, I = 0)
I
1.0
50
50
ꢁAdc
nAdc
nAdc
CES
CBO
CE
Collector Cutoff Current
(V = 30 Vdc, I = 0)
B
I
−
CB
Emitter Cutoff Current
(V = 10 Vdc, I = 0)
E
I
−
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain, (Note 2)
h
FE
−
(I = 10 mAdc, V
= 5.0 Vdc)
2N6426
2N6427
20,000
10,000
−
−
200,000
100,000
C
CE
(I = 100 mAdc, V
= 5.0 Vdc)
= 5.0 Vdc)
2N6426
2N6427
30,000
20,000
−
−
300,000
200,000
C
CE
(I = 500 mAdc, V
2N6426
2N6427
20,000
14,000
−
−
200,000
140,000
C
CE
Collector−Emitter Saturation Voltage
(I = 50 mAdc, I = 0.5 mAdc)
V
Vdc
CE(sat)
−
−
0.71
0.9
1.2
1.5
C
B
(I = 500 mAdc, I = 0.5 mAdc
C
B
Base−Emitter Saturation Voltage
(I = 500 mAdc, I = 0.5 mAdc)
V
−
1.52
2.0
Vdc
Vdc
BE(sat)
C
B
Base−Emitter On Voltage
(I = 50 mAdc, V = 5.0 Vdc)
V
−
1.24
1.75
BE(on)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
C
−
−
5.4
10
7.0
15
pF
pF
kꢂ
obo
(V
CB
= 10 Vdc, I = 0, f = 1.0 MHz)
E
Input Capacitance
(V = 1.0 Vdc, I = 0, f = 1.0 MHz)
C
ibo
EB
Input Impedance
(I = 10 mAdc, V
C
h
ie
fe
fe
= 5.0 Vdc, f = 1.0 kHz)
CE
2N6426
2N6427
100
50
−
−
2000
1000
C
Small−Signal Current Gain
(I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz)
h
−
−
2N6426
2N6427
20,000
10,000
−
−
−
−
C
CE
Current−Gain − High Frequency
|h
|
(I = 10 mAdc, V
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc, f = 1.0 kHz)
2N6426
2N6427
1.5
1.3
2.4
2.4
−
−
C
CE
CE
Output Admittance
(I = 10 mAdc, V
C
h
−
−
1000
ꢁmhos
oe
Noise Figure
NF
−
3.0
10
dB
(I = 1.0 mAdc, V
= 5.0 Vdc, R = 100 kꢂ, f = 1.0 kHz)
S
C
CE
2. Pulse Test: Pulse Width v 300 ꢁs; Duty Cycle v 2.0%.
http://onsemi.com
117