2N5461_D74Z 参数 Datasheet PDF下载

2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462

2N5460

2N5461

2N5462

MMBF5460

MMBF5461

MMBF5462

G

S

G

S

TO-92

D

SOT-23

Mark: 6E / 61U / 61V

D

NOTE: Source & Drain

are interchangeable

P-Channel General Purpose Amplifier

This device is designed primarily for low level audio and general

purpose applications with high impedance signal sources. Sourced

from Process 89.

Absolute Maximum Ratings*

-

TA = 25°C unless otherwise noted

Symbol

V

DG

V

GS

I

GF

T

J

,T

stg

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Parameter

Value

- 40

40

10

-55 to +150

Units

V

V

mA

°C

Operating and Storage Junction Temperature Range

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)

These ratings are based on a maximum junction temperature of 150 degrees C.

2)

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

P

D

R

θJC

R

θJA

TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2N5460-5462

350

2.8

125

357

Max

*MMBF5460-5462

225

1.8

556

Units

mW

mW/°C

°C/W

°C/W

*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001

Fairchild Semiconductor Corporation

2N5460/5461/5462/MMBF5460/5461/5462, Rev A