2N4953
NPN General Purpose Amplifier
•
This device designed for use as general purpose amplifier and
switches requiring collector currents to 500mA.
Sourced from Process 10.
•
TO-92
1. Emitter 2. Collector 3. Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
30
60
CEO
V
CBO
EBO
5.0
V
I
- Continuous
1.0
A
C
T , T
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
J
ST
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
ROCHESTER [ Rochester Electronics ]
