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1N5927BRLG 参数 Datasheet PDF下载

1N5927BRLG图片预览
型号: 1N5927BRLG
PDF下载: 下载PDF文件 查看货源
内容描述: [12 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, LEAD FREE, PLASTIC, CASE 59-10, 2 PIN]
分类和应用: 测试二极管
文件页数/大小: 9 页 / 753 K
品牌: ROCHESTER [ Rochester Electronics ]
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1N5913B Series  
APPLICATION NOTE  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to determine  
junction temperature under any set of operating conditions  
in order to calculate its value. The following procedure is  
recommended:  
DT is the increase in junction temperature above the lead  
temperature and may be found from Figure 2 for a train of  
power pulses (L = 3/8 inch) or from Figure 10 for dc power.  
JL  
DTJL = qJL PD  
For worst-case design, using expected limits of I , limits  
Z
Lead Temperature, T , should be determined from:  
L
of P and the extremes of T (DT ) may be estimated.  
D
J
J
TL = qLA PD + TA  
Changes in voltage, V , can then be found from:  
Z
q
is the lead-to-ambient thermal resistance (°C/W) and  
LA  
DV = qVZ DTJ  
P is the power dissipation. The value for q will vary and  
depends on the device mounting method. q is generally  
30−40°C/W for the various clips and tie points in common  
use and for printed circuit board wiring.  
The temperature of the lead can also be measured using a  
thermocouple placed on the lead as close as possible to the  
tie point. The thermal mass connected to the tie point is  
normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result of  
pulsed operation once steady-state conditions are achieved.  
D
LA  
q
, the zener voltage temperature coefficient, is found  
VZ  
LA  
from Figures 5 and 6.  
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly by the  
zener resistance. For best regulation, keep current  
excursions as low as possible.  
Data of Figure 2 should not be used to compute surge  
capability. Surge limitations are given in Figure 3. They are  
lower than would be expected by considering only junction  
temperature, as current crowding effects cause temperatures  
to be extremely high in small spots resulting in device  
degradation should the limits of Figure 3 be exceeded.  
Using the measured value of T , the junction temperature  
may be determined by:  
L
TJ = TL + DTJL  
http://onsemi.com  
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