RT6575A/B
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Power MOSFET Drivers
High State, VBOOTx VUGATEx = 0.25V,
VBOOTx VPHASEx = 5V
--
--
--
3
2
3
--
--
UGATEx On-Resistance
RUGATEx
Low State, VUGATEx VPAHSEx
0.25V, VBOOTx VPHASEx = 5V
=
High State, VLDO5 VLGATEx = 0.25V,
VLDO5 = 5V
--
LGATEx On-Resistance
Dead-Time
RLGATEx
Low State, VLGATEx GND = 0.25V
LGATEx Rising
--
--
--
1
--
20
30
--
tD
ns
--
UGATEx Rising
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright 2016 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS6575A/B-03 February 2016
www.richtek.com
9
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
