Preliminary
XVT9002
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Excellent Frequency Stability & Low Phase Noise
• 3.2 x 2.5 x 1.3 mm Surface-Mount Case
26 MHz
VCTCXO
• Complies with Directive 2002/95/EC (RoHS)
Pb
SM3225-4 Case
Maximum
Electrical Characteristics
Characteristic
Sym
Notes
Minimum
Typical
Units
MHz
°C
Nominal Frequency
Fo
26.000000
Storage Temperature
-40
-30
2.3
0.8
+85
+75
2.5
Operating Temperature Range
Power Supply Voltage
°C
Vcc
2.4
V
VP-P
Output Voltage with Load 10 pF ||10 K
Vout
Output Waveform
clipped sinewave
1.2±1.0
Power Supply Current
Icc
1.2
mA
V
Control Voltage
Vcon
Control Voltage Input Impedance
Frequency Tolerance, Vcontrol = 1.2 V, after Reflow
Frequency Stability versus:
100K
ohms
±2.5 ppm max @ 25 °C ±3 °C
±2.5
ppm
Temperature, -30 to 75 °C
Supply Voltage, 2.3 to 2.5 V
Load 10 pF||10 K±10%
±0.3
±0.2
ppm
ppm
Control Voltage Frequency Range, 1.2 ±1.0 V
Start Up Time, 90% of final RF level in VP-P
±9
±15
ppm
2.0
ms
Aging @ 25 °C
±1
ppm/year
dBc
Harmonics
-5.0
SSB Phase Noise @ 1 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
-130 dBc/Hz maximum
1000
units
9002 // YWWS
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
The design, manufacturing process, and specifications of this device are subject to change without notice.
www.RFM.com E-mail: info@rfm.com
© 2009-2012 by RF Monolithics, Inc.
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XVT9002 - 2/21/12
RFM [ RF MONOLITHICS, INC ]
