Preliminary
GaN-SiC Broadband Amplifier
Product Features
• Solid-state linear amplifier design
• GaN on SiC HEMT
• Small and light weight
• Wide Band Operation 500~2500MHz
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• Harsh environmental condition
• High efficiency
• 50W typical Psat
RUP15100-10
Application
• Broadband communication
• Broadcasting
• General purpose RF amplifier
• Linear applications in the L/S
Frequency Bands
Description
The RUP15050-10 is designed for RF system application frequencies from 500MHz to 2.5GHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide
bandwidth and high efficiency.
Electrical Specifications
@ VDD=+28VDC, T=25°C, 50Ω System
PARAMETER
Frequency Range
Output Power CW
Output Power @ P3dB G.C.P
Small Signal Gain
Small Signal Gain Flatness
Input VSWR
Harmonics @ P1dB G.C.P
Spurious Signals
Operating Voltage
Supply Current @ Pout = 50W CW
Supply Current @ Pout = 25W CW
Symbol
BW
Psat
P
3dB
SSG
ΔG
S11
H
Spur
VDC
IDD
IDD
Min
500
70
50
10.5
Typ
Max
2500
Unit
MHz
Watt
Watt
100
63
11.5
± 1.5
2.0:1
12.5
± 2.0
2.5:1
-10
-70
-60
30
10.0
7.0
dB
dB
-
dBc
dBc
Volt
Amp
Amp
27
28
9.0
6.0
* Please DO NOT ENTER RF INPUT POWER OVER +43dBm. (to prevent the main from damaging)
Environmental Characteristics
PARAMETER
Operating Case Temperature
Storage Temperature
Symbol
T
c
Ts
Min
0
-40
Typ
Max
+70
+85
Unit
°C
°C
Mechanical Specifications
PARAMETER
Dimensions ( L
x
W
x
H )
RF Connectors In/Out
Cooling
Value
107.0 x 50.0 x 5.8
SMA Female
External Heat sink + airflow
Units
mm
Limits
Max
▪
Tel : 82-31-250-5011
▪
rfsales@rfhic.com
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All specifications may change without notice.
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Version 0.1