Preliminary
GaN-SiC Broadband Amplifier
RUP15020-11
Product Features
Application
• Solid-state linear amplifier design
• Broadband communication
• GaN on SiC HEMT
• Broadcasting
• Small and light weight
• General purpose RF amplifier
• Linear applications in the L/S
Frequency Bands
• Wide Band Operation 500~2500MHz
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• Harsh environmental condition
• High efficiency
• 25W typical Psat
Description
The RUP15020-11 is designed for RF system application frequencies from 500MHz to 2.5GHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide
bandwidth and high efficiency.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω System
PARAMETER
Frequency Range
Symbol
Min
500
10
Typ
Max
Unit
MHz
Watt
Watt
dB
BW
Psat
P3dB
SSG
ΔG
2500
25
15
Output Power CW
5
Output Power @ P3dB G.C.P
Small Signal Gain
50
± 1.5
2.0 : 1
-10
-70
30
± 2.0
dB
Small Signal Gain Flatness
Input VSWR
S11
H
2.5 : 1
-
dBc
dBc
Volt
Amp
Amp
Harmonics @ P1dB G.C.P
Spurious Signals
Spur
VDC
IDD
IDD
-60
32
3.5
5
28
Operating Voltage
2.5
Supply Current @ P3 CW
Supply Current @ Psat CW
3.5
* Please DO NOT ENTER RF INPUT POWER OVER +5dBm. (to prevent the main from damaging)
Environmental Characteristics
PARAMETER
Operating Case Temperature
Storage Temperature
Symbol
Min
0
Typ
Max
+70
Unit
°C
Tc
Ts
-40
+85
°C
Mechanical Specifications
PARAMETER
Value
Units
mm
Limits
Dimensions ( L x W x H )
RF Connectors In/Out
Cooling
120 x 71 x 18.5
SMA Female
External Heat sink + airflow
▪ Tel : 82-31-250-5011
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 0.3
RFHIC [ RFHIC ]
