Preliminary
GaN-SiC Broadband Amplifier
RUP15010-10
Product Features
Application
• Solid-state linear amplifier design
• Broadband communication
• GaN on SiC HEMT
• Broadcasting
• Small and light weight
• General purpose RF amplifier
• Linear applications in the L/S
Frequency Bands
• Wide Band Operation 500~2500MHz
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• Harsh environmental condition
• High efficiency
• 10W typical Psat
Description
The RUP15010-10 is designed for RF system application frequencies from 500MHz to 2.5GHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide
bandwidth and high efficiency.
Electrical Specifications @ VDD=+28VDC, T=25°C, 50Ω System
PARAMETER
Frequency Range
Symbol
Min
Typ
Max
Unit
MHz
Watt
Watt
dB
BW
Psat
P3dB
SSG
ΔG
500
2500
10
5
Output Power CW
Output Power @ P3dB G.C.P
Small Signal Gain
10
14
± 1.5
± 2.0
8.5 : 1
-10
dB
Small Signal Gain Flatness
Input VSWR
S11
H
-
dBc
dBc
Volt
Amp
Amp
Harmonics @ P1dB G.C.P
Spurious Signals
Spur
VDC
IDD
IDD
-70
28
-60
27
30
Operating Voltage
1.0
0.7
1.5
Supply Current @ P sat
Supply Current @ P 3dB
1.0
* Please DO NOT ENTER RF INPUT POWER OVER +37dBm. (to prevent the main from damaging)
Environmental Characteristics
PARAMETER
Operating Case Temperature
Storage Temperature
Symbol
Min
0
Typ
Max
+70
Unit
°C
Tc
Ts
-40
+85
°C
Mechanical Specifications
PARAMETER
Value
Units
mm
Limits
Max
55.0 x 30.0 x 16.0
SMA Female
Dimensions ( L x W x H )
RF Connectors In/Out
Cooling
External Heat sink + airflow
▪ Tel : 82-31-250-5011
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 0.3
RFHIC [ RFHIC ]
