Preliminary
GaN-SiC Pallet Amplifier
RTP26070-20
Product Features
Application
• Doherty amplifier design
• GaN on SiC HEMT
• LTE, WiMAX DPD amplifier
• General purpose RF amplifier
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 70W typical PAVG
Description
The RTP26070-20 is designed for RF system application frequencies from 2620MHz to 2690MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP26070-20 is DPD application amplifier.
Electrical Specifications @ VDD=+48VDC, T=25°C, 50Ω
System
PARAMETER
Symbol
Min
2620
-
Typ
-
Max
Unit
MHz
dBm
MHz
dBm
dB
BW
PAVG
SBW
Psat
2690
Frequency Range
Output Power
48.5
20
Instantaneous Bandwidth
Output Power @ Psat G.C.P
Small Signal Gain
-
50
-
56.0
55
-
-
SSG
ΔG
± 0.5
± 3.0
-25
-53
10
± 1.0
dB
Small Signal Gain Flatness
Gain Variation
dB
ΔGt
ACLR @ LTE 10MHz 1FA※1
ACLR with DPD
ACLR
ACLR
FC
dBc
dBc
dBm
Volt
Volt
%
9
11
Forward Coupling Level
Operating Voltage 1
VDC1
VDC2
EC
48
5.6
45
Operating Voltage 2
Chain Efficiency※2 @ Pout 77.6W
Pallet Efficiency @ Pout 70.8W
Input Port Return Loss
Output Port Return Loss
-
-
-
EP
40
42
%
IRL
-13
-15
-18
-18
dB
ORL
dB
※1 Test Signal Condition: LTE 10MHz 1FA(PAR 7.5dB), Test DPD solution: Optichron DPD(OP6180)
※2 Chain Efficiency is an entire operating transistor efficiency excluded isolator and coupler.
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
Min
-40
Typ
Max
+60
Unit
°C
Tc
-
-
Ts
-45
+90
°C
▪ Tel : 82-31-250-5078
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 0.2
RFHIC [ RFHIC ]
