GaN-SiC Pallet Amplifier
RTP23010-12
Product Features
Application
• Doherty amplifier design
• WiMAX DPD amplifier
• GaN on SiC HEMT
• General purpose RF amplifier
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 8~10W typical PAVG
Description
RTP23010-12 has been designed for RF system application frequencies from 2300MHz to 2400MHz, with high gain.
This DPD application Pallet Amplifier has been developed with GaN on SiC HEMT technology that has advantages of high
breakdown voltage, high linearity, and high efficiency.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
PARAMETER
Symbol
Min
Typ
Max
Unit
Frequency Range
Output Power
BW
2300
-
-
2400
10
MHz
Watt
PAVG
8
Output Power @ Psat G.C.P
Psat
-
60
-
Watt
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
SSG
ΔG
58
-
60
± 1.0
± 3.0
-25
-
dB
dB
± 2
ΔGt
dB
ACLR @ WiMAX 10MHz 2FA
ACLR with DPD
ACLR
ACLR
-23
dBr
dBr
-46
Forward Coupling
Operating Voltage
FC
VDC
E
-32
28
-
-31
30
-30
dB
Volt
%
-
-
Efficiency @ Pout 10Watt(PAR 8.0dB)
35
※ Test Signal Condition: WiMAX 10MHz 2FA (PAR 8.0dB), Test DPD solution : TI DPD
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
Min
-30
Typ
Max
+60
Unit
°C
Tc
Ts
-
-
-40
+90
°C
Mechanical Specifications
Value
Units
Limits
Max
PARAMETER
Dimensions ( L x W x H )
Weight
130 x 80 x 18.8
300
mm
g
Typical
SMA Female
RF Connectors In/Out
RF Connector Coupling
DC Connectors / Controls
Cooling
MCX Female
MDF7-10S-2.54DSA
External Heat sink + airflow
▪ Tel : 82-31-250-5011
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 0.5