Preliminary
GaN Power Amp Pallet
RTP08050-20B
Product Features
Application
• Broadband amplifier design
• LTE Application
• Small and light weight
• 50 Ohm Input / Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
Description
The RTP08050-20B is designed for RF system application frequencies from 837.5MHz to 957MHz, with high gain.
This Pallet Amplifier uses GaN on Sic HEMT technology which performs high breakdown voltage, high linearity, and high
efficiency. The RTP08050-20B is a LTE DPD application amplifier.
Electrical Specifications @ VDD= 45V, 50Ω System
PARAMETER
Frequency Range
Symbol
BW
Specification
837.5~957MHz
OBW
Pout
119.5MHz
Operating Bandwidth within BW
Average Output Power
Peak Output Power
47.2dBm(52.5W) Avg. @ LTE 1FA 10MHz
54 dBm (Min. Duty Cycle 10% Pulse)
Psat
-27dBc(Min)
@±10MHz
@-30 ~ +60°C
@45V
Pre-DPD
ACLR (LTE 1FA 10MHZ)
@ Po=47.2dBm
ACLR
-50dBc(Min)
@±10MHz
Post-DPD
@CFR 6.5dB
G
55dB (Min.)
RF Gain @ 25℃
Gain Flatness
ΔG
3.0 dB(Peak to peak) @ Operating Frequency
-12dB (Max.)
S11
S22
VDC
Input Return Loss
Output Return Loss
Normal Operating Voltage
-17dB (Max.)
V1= +5.6V, V2= +45V
Current Consumption
@ Po=47.2dBm
0.3A @ 5.6V (Max.)
3.1A / 45V (Typ.)
IDD
Eff
FB
T
38% @ 45V (Typ.)
+8dBm ± 2dB
0.9V @ 40℃
Efficiency
Feedback Output level @ 47.2dBm
Temp Detector
▪ Tel : 82-31-250-5078
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 1.0
RFHIC [ RFHIC ]
