Power Amplifier
RFW2140-10
Product Features
Application
• UMTS Repeater
• RF Sub-Systems
• Base Station
• Small size by using simple matching circuit board
• Single Supply Voltage
• Heat sink 99.9% copper, gold plated
• High Productivity
• Low Manufacturing Cost
• GaAs HFET
Package : DP-56
Description
The power amplifier module is designed for base stations and cell extenders and
operating frequency range is from 300MHz to 2.3GHz
GaAs HFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
PARAMETER
Min
Typ
Max
Frequency Range (MHz)
Small Signal Gain (dB)
Gain Flatness (Max.)
Gain Variation Over Temp
Output Return Loss
Output P1dB
2110 ~ 2170
24.5
± 0.5dB @ 50MHz BW
± 0.7dB
± 1.5dB
-15dB
35 dBm
50 dBm
36 dBm
W-CDMA Power (1 FA)
OIP3 @ tone / 27 dBm
Noise Figure (Typ.)
Drain Voltage
29dBm @ -45dBc ACLR
51 dBm
4 dB
10V
Drain Current
Dimensions in mm
1.5A
Functional Diagram
Operating Temp Range
Dimensions (W×L×H)
-20°C ~ +70°C
32.0 × 44.0 × 10.0 [mm]
NOTE
*Test condition: 2140MHz, 3GPP W-CDMA signal modulation
Test Model 1, 64DPCH, 3.84MHz BW, ±5MHz offset
* RFW Series : Internally Matched Module
▪ Tel : 82-31-250-5011
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 1.2
RFHIC [ RFHIC ]
