Power Amplifier
RFM0415-10
Product Features
Application
• Small size by using simple matching circuit board
• High Efficiency
• Single Supply Voltage
• TRS
• RF Sub-Systems
• Base Station
• High Linearity, 10W Power
• Heat sink 99.9% copper, gold plate
• High Productivity
Package : DP-36
• Low Manufacturing Cost
• GaAs MESFET
Description
The power amplifier module is designed for base stations and cell extenders
as cellular and TRS, GSM , IMT-2000, ISM, MMDS frequency systems.
GaAs MESFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs MESFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
PARAMETER
Min
Typ
Max
Frequency Range (MHz)
Small Signal Gain (dB)
Gain Flatness (Max.)
380 ~ 450
16
± 0.5dB @ 50MHz BW
Gain Variation Over Temp
VSWR (Input)
± 0.5dB
2 : 1
± 1.0dB
Output P1dB
37dBm
48 dBm
38 dBm
Vcc / Idc
9V / 1.2A
49 dBm
OIP3 @ tone / 27 dBm
Noise Figure (Typ.)
Shut Down (On/Off)
In/Out Connectors
5 dB
＋5V @ 25㎂ / 0V
SMA Female (50 Ω)
Operating Temp Range
-20°C ~ +70°C
Dimensions in mm
Functional Diagram
29.0 × 30.2 × 9.0 [mm] (RFM)
48.0 × 54.2 × 22.0 [mm] (RFH)
Dimensions (W×L×H)
NOTE
* RFM : Internally Matched Module
* RFH : Housing Type
: RF Connector
: SMA Female
▪ Tel : 82-31-250-5011
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 5.4
RFHIC [ RFHIC ]
