RFA1930-03 / RFA1950-03
RFA1970-03
Power Amplifier
Product Features
Application
• RF Sub-Systems
• Base Station
• IMT-2000
• Small size by using simple matching circuit board
• Single Supply Voltage
• Heat sink 99.9% copper, gold plated
• High Productivity
• Low Manufacturing Cost
• GaAs HFET
Package : DP-36
Description
The power amplifier module is designed for base stations and cell extenders and
operating frequency range is from 300MHz to 2.3GHz.
GaAs HFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
PARAMETER
RFA1930-03
RFA1950-03
RFA1970-03
Frequency Range (MHz)
Small Signal Gain (dB)
Gain Flatness (Max.)
Gain Variation Over Temp
VSWR (Input)
1920~1940
1940~1960
25
1960~1980
± 0.5dB @ 50MHz BW
± 0.7dB (Typ.)
2 : 1
± 1.5dB(Max.)
Output P1dB
34 dBm (Min.)
48 dBm (Min.)
35 dBm (Typ.)
27dBm @ -45dBc ACLR
23dBm @ -45dBc ACLR
49 dBm (Typ.)
3.0 dB
W-CDMA (1 FA)
W-CDMA (4 FA)
OIP3 @ tone / 23 dBm
Noise Figure (Typ.)
Drain Voltage
9V
Dimensions in mm
Functio1n.0aAl Diagram
Drain Current
Operating Temp Range
Dimensions (W×L×H)
-20°C ~ +70°C
29.0 × 30.2 × 10.1 [mm]
NOTE
* W-CDMA : Resolution bandwidth of equipment is 30kHz. Input signal is 3GPP TS25.141 v.3.4.1 Test Model 1, Chip Rate:3.84 Mcps,
64DPCHs/Carrier, 1 carrier
@ ±5MHz and ±10MHz offset in 30KHz resolution bandwidth
* Operation Bandwidth : 50MHz
* RFA Series : Internally Matched Module
▪ Tel : 82-31-250-5011
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 5.4
RFHIC [ RFHIC ]
