AE616
E-pHEMT
Product Features
Application
• 500 ~ 4000MHz
• GaAs E-pHEMT
• Cellular, PCS, W-CDMA Systems
• High Linearity Drive Amplifier
• 37dBm Output IP3
• 20dB Gain at 900MHz
• 24dBm P1 dB
• Single +5V Supply
• Pb Free / RoHS Standard
Package Type: SOT-89
Description
AE616 is a drive or pre-drive amplifier designed with GaAs E-pHEMT in a low cost SOT-89 package.
This E-pHEMT amplifier is designed as driver devices for infrastructure equipment in the 500~4000MHz Wireless technologies
such as cellular, GSM, PCS, CDMA, W-CDMA, Wibro, Wimax.
Specifications
PARAMETER
Units
Min
Typ
Max
Frequency Range
Gain (S21)
MHz
dB
500-4000
20
Input Return Loss (S11)
dB
10
10
35
22
12
Output Return Loss (S22)
Output 3rd Order Intercept Point (OIP3)
Output 1dB compression Point (P1dB)
Noise Figure
dB
12
dBm
dBm
dB
37
24
2.7
3.4
DC Operating Current
mA
V
70
85
100
Operating Gate Voltage(Vds=5V, Ids=85mA)
Threshold voltage
0.4
V
0.1
0.25
0.4
Test Condition
① 880MHz, Vds=5V, Ids=85mA at 25℃
② OIP3 is measured with two tones, at an output power of +10dBm/tone separated by 1MHz..
Absolute Maximum Ratings
PARAMETER
Operating Case Temperature (℃)
Storage Temperature (℃)
Drain-Source Voltage
Drain Current
Rating
-40 ~ 85
-50 ~ 125
+7V
Remark
250mA
-5V ~ 1V
150℃
Gate-Source Voltage
Channel Temperature
RF Input Power
25dBm
▪ Tel : 82-31-250-5011
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 1.4
RFHIC [ RFHIC ]
