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2SA1190 参数 Datasheet PDF下载

2SA1190图片预览
型号: 2SA1190
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用:
文件页数/大小: 7 页 / 180 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA1190的Datasheet PDF文件第1页浏览型号2SA1190的Datasheet PDF文件第2页浏览型号2SA1190的Datasheet PDF文件第3页浏览型号2SA1190的Datasheet PDF文件第5页浏览型号2SA1190的Datasheet PDF文件第6页浏览型号2SA1190的Datasheet PDF文件第7页  
2SA1190  
Collector to Emitter Breakdown Voltage vs.  
Base to Emitter Resistance  
Emitter Cutoff Current vs.  
Emitter to Base Voltage  
–1,000  
–190  
Typical Value  
C = –1 mA  
IC = 0  
I
Ta = 75°C  
–180  
–170  
–160  
–150  
–140  
–100  
–10  
25  
–1.0  
–0.1  
–25  
0
–2  
–4  
–6  
–8  
–10  
10  
100  
1 k  
10 k  
100 k  
Base to mitter Resistance RBE ()  
Emitter to Base Voltage VEB (V)  
CoSaturation Voltage vs.  
urrent  
DC Current Transfer Ratio vs.  
Collector Current  
1,000  
Ta = 75°C  
–25  
25  
300  
100  
Ta = 75°C  
–25  
25  
03  
–0.01  
30  
10  
–1  
–3  
–10  
–30  
–100  
–1  
–3  
Collec
Collector Current IC (mA)  
Base s.  
Gain Bandwidth Product vs.  
Collector Current  
–10  
1,000  
500  
IC = 10 IB  
Pulse  
VCE = –6 V  
–3  
200  
100  
50  
25  
–1.0  
Ta = –25°C  
75  
–0.3  
–0.1  
20  
10  
–0.5 –1.0 –2  
–5 –10 –20  
–50  
–1  
–3  
–10  
–30  
–100  
Collector Current IC (mA)  
Collector Current IC (mA)  
Rev.2.00 Aug 10, 2005 page 4 of 6