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2SA1188 参数 Datasheet PDF下载

2SA1188图片预览
型号: 2SA1188
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用:
文件页数/大小: 7 页 / 172 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA1188的Datasheet PDF文件第1页浏览型号2SA1188的Datasheet PDF文件第2页浏览型号2SA1188的Datasheet PDF文件第3页浏览型号2SA1188的Datasheet PDF文件第5页浏览型号2SA1188的Datasheet PDF文件第6页浏览型号2SA1188的Datasheet PDF文件第7页  
2SA1188  
Emitter Cutoff Current vs.  
Emitter to Base Voltage  
Collector to Emitter Breakdown Voltage vs.  
Base to Emitter Resistance  
–1,000  
–190  
Typical Value  
IC = –1 mA  
IC = 0  
Ta = 75°C  
–180  
–170  
–160  
–150  
–140  
–100  
–10  
25  
–1.0  
–0.1  
–25  
0
–2  
–4  
–6  
–8  
–10  
10  
100  
1 k  
10 k  
100 k  
Base to mitter Resistance RBE ()  
Emitter to Base Voltage VEB (V)  
CoSaturation Voltage vs.  
Current  
DC Current Transfer Ratio vs.  
Collector Current  
1,000  
Ta = 75°C  
–25  
25  
300  
100  
Ta = 75°C  
–25  
25  
03  
–0.01  
30  
10  
–1  
–3  
–10  
–30  
–100  
–1  
–3  
Collec
Collector Current IC (mA)  
Base s.  
Gain Bandwidth Product vs.  
Collector Current  
–10  
1,000  
500  
IC = 10 IB  
Pulse  
VCE = –6 V  
–3  
200  
100  
50  
25  
–1.0  
Ta = –25°C  
75  
–0.3  
–0.1  
20  
10  
–0.5 –1.0 –2  
–5 –10 –20  
–50  
–1  
–3  
–10  
–30  
–100  
Collector Current IC (mA)  
Collector Current IC (mA)  
Rev.3.00 Aug 10, 2005 page 4 of 6