欢迎访问ic37.com |
会员登录 免费注册
发布采购

1SS82-E 参数 Datasheet PDF下载

1SS82-E图片预览
型号: 1SS82-E
PDF下载: 下载PDF文件 查看货源
内容描述: [0.2A, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2]
分类和应用: 二极管
文件页数/大小: 7 页 / 73 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号1SS82-E的Datasheet PDF文件第1页浏览型号1SS82-E的Datasheet PDF文件第2页浏览型号1SS82-E的Datasheet PDF文件第3页浏览型号1SS82-E的Datasheet PDF文件第5页浏览型号1SS82-E的Datasheet PDF文件第6页浏览型号1SS82-E的Datasheet PDF文件第7页  
1SS82  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Value  
250  
Unit  
V
1
Peak reverse voltage  
Reverse voltage  
VRM  
VR  
IFM  
IFSM  
IO  
*
200  
V
Peak forward current  
Non-Repetitive peak forward surge current  
Average forward current  
Power dissipation  
625  
mA  
A
2
*
1
200  
mA  
mW  
°C  
°C  
Pd  
Tj  
400  
Junction temperature  
Storage temperature  
175  
Tstg  
65 to +175  
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.  
2. Within 1s forward surge current.  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
1.0  
0.2  
100  
Unit  
V
Test Condition  
Forward voltage  
Reverse current  
VF  
IR1  
IR2  
C
IF = 100 mA  
µA  
VR = 200 V  
VR = 250 V  
Capacitance  
1.5  
pF  
ns  
VR = 0 V, f = 1 MHz  
IF = IR =30 mA, Irr = 3 mA, RL = 100 Ω  
Reverse recovery time trr  
100  
Rev.2, Oct. 2000, page 2 of 5