欢迎访问ic37.com |
会员登录 免费注册
发布采购

JANTXV2N2919L 参数 Datasheet PDF下载

JANTXV2N2919L图片预览
型号: JANTXV2N2919L
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-78, 6 PIN]
分类和应用: 晶体管
文件页数/大小: 20 页 / 229 K
品牌: RAYTHEON [ RAYTHEON COMPANY ]
 浏览型号JANTXV2N2919L的Datasheet PDF文件第3页浏览型号JANTXV2N2919L的Datasheet PDF文件第4页浏览型号JANTXV2N2919L的Datasheet PDF文件第5页浏览型号JANTXV2N2919L的Datasheet PDF文件第6页浏览型号JANTXV2N2919L的Datasheet PDF文件第8页浏览型号JANTXV2N2919L的Datasheet PDF文件第9页浏览型号JANTXV2N2919L的Datasheet PDF文件第10页浏览型号JANTXV2N2919L的Datasheet PDF文件第11页  
MIL-PRF-19500/355M  
3. REQUIREMENTS  
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.  
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a  
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)  
before contract award (see 4.2 and 6.3).  
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as  
specified in MIL-PRF-19500 and as follows:  
hFE-1/hFE-2.............................................Static forward-current-gain-ratio. The matching ratio of the static forward-  
current transfer ratio of each section.  
RθJA .....................................................Thermal resistance junction to ambient.  
RθJSP(IS)................................................Thermal resistance junction to solder pads (infinite sink mount to PCB).  
|VBE1 - VBE2 |........................................Absolute value of base-emitter-voltage differential between the individual  
sections.  
|VBE1-2 (T1) - VBE1-2 (T2)| ................Absolute value of the algebraic difference between the base-emitter-  
voltage differentials between the individual sections at two different  
temperatures.  
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in  
MIL-PRF-19500 and on figures 1, 2, 3, and 4.  
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.  
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).  
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance  
characteristics are as specified in 1.3, 1.4, and 1.5.  
3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I.  
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.  
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and  
shall be free from other defects that will affect life, serviceability, or appearance.  
4. VERIFICATION  
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:  
a. Qualification inspection (see 4.2).  
b. Screening (see 4.3).  
c. Conformance inspection (see 4.4 and tables I and II).  
7