2N2904
Data Sheet
Description
Applications
• General purpose
• Low power
Semicoa Semiconductors offers:
• PNP silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2904J)
• JANTX level (2N2904JX)
• JANTXV level (2N2904JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 0600
• Reference document:
MIL-PRF-19500/290
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
VCBO
Rating
40
Unit
Volts
Volts
60
Volts
mA
VEBO
IC
5
Collector Current, Continuous
600
W
Power Dissipation, TA = 25 °C
Derate above 60 °C
0.8
PT
PT
5.7
mW/°C
W
Power Dissipation, TC = 25 °C
3.0
17.2
mW/°C
°C/W
Derate above 25 °C
Thermal Resistance
175
RθJA
TJ
°C
°C
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
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