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FM25L04B 参数 Datasheet PDF下载

FM25L04B图片预览
型号: FM25L04B
PDF下载: 下载PDF文件 查看货源
内容描述: 4KB的串行3V F-RAM存储器 [4Kb Serial 3V F-RAM Memory]
分类和应用: 存储
文件页数/大小: 14 页 / 208 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM25L04B - 4Kb 3V SPI F-RAM  
WRSR – Write Status Register  
RDSR - Read Status Register  
The RDSR command allows the bus master to verify  
the contents of the Status Register. Reading status  
provides information about the current state of the  
write protection features. Following the RDSR op-  
code, the FM25L04B will return one byte with the  
contents of the Status Register. The Status Register is  
described in detail in a later section.  
The WRSR command allows the user to select  
certain write protection features by writing a byte to  
the Status Register. Prior to issuing a WRSR  
command, the /WP pin must be high or inactive.  
Prior to sending the WRSR command, the user must  
send a WREN command to enable writes. Note that  
executing a WRSR command is a write operation  
and therefore clears the Write Enable Latch.  
Figure 7. RDSR Bus Configuration  
Figure 8. WRSR Bus Configuration (WREN not shown)  
Write Enable Latch. Attempting to directly write the  
Status Register & Write Protection  
WEL bit in the Status Register has no effect on its  
state. This bit is internally set and cleared via the  
WREN and WRDI commands, respectively.  
The write protection features of the FM25L04B are  
multi-tiered. Taking the /WP pin to a logic low state  
is the hardware write protect function. All write  
operations are blocked when /WP is low. To write the  
memory with /WP high, a WREN op-code must first  
be issued. Assuming that writes are enabled using  
WREN and by /WP, writes to memory are controlled  
by the Status Register. As described above, writes to  
the status register are performed using the WRSR  
command and subject to the /WP pin. The Status  
Register is organized as follows.  
BP1 and BP0 are memory block write protection  
bits. They specify portions of memory that are  
write-protected as shown in the following table.  
Table 3. Block Memory Write Protection  
BP1  
BP0 Protected Address Range  
0
0
1
1
0
1
0
1
None  
180h to 1FFh (upper ¼)  
100h to 1FFh (upper ½)  
000h to 1FFh (all)  
Table 2. Status Register  
Bit  
7
6
5
4
0
3
BP1  
2
BP0  
1
0
0
Name  
0
0
0
WEL  
The BP1 and BP0 bits allow software to selectively  
write-protect the array. These settings are only used  
when the /WP pin is inactive and the WREN  
command has been issued. The following table  
summarizes the write protection conditions.  
Bits 0 and 7-4 are fixed at 0 and cannot be modified.  
Note that bit  
0 (“Ready” in EEPROMs) is  
unnecessary as the F-RAM writes in real-time and is  
never busy. The BP1 and BP0 control write  
protection features. They are nonvolatile (shaded  
yellow). The WEL flag indicates the state of the  
Rev. 1.3  
Feb. 2011  
Page 6 of 14