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FM24C04A-STR 参数 Datasheet PDF下载

FM24C04A-STR图片预览
型号: FM24C04A-STR
PDF下载: 下载PDF文件 查看货源
内容描述: [Memory Circuit, 512X8, CMOS, PDSO8, MS-012AA, SOIC-8]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 12 页 / 252 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM24C04A  
No  
Start  
S
Address  
Acknowledge  
By Master  
Stop  
Slave Address  
1
A
Data Byte  
Data  
1
P
By FM24C04A  
Acknowledge  
Figure 7. Current Address Read  
No  
Acknowledge  
Start  
S
Address  
Acknowledge  
By Master  
Stop  
Slave Address  
1
A
Data Byte  
A
Data Byte  
1
P
By FM24C04A  
Acknowledge  
Data  
Figure 8. Sequential Read  
No  
Address  
Acknowledge  
Start  
Start  
S
Address  
Acknowledge  
A
By Master  
Stop  
S
Slave Address  
0
A
Word Address  
A
Slave Address  
1
A
Data Byte  
Data Byte  
1 P  
By FM24C04A  
Acknowledge  
Data  
Figure 9. Selective (Random) Read  
defined by A8-A2. Each access causes an endurance  
cycle for a row. Endurance is virtually unlimited. At  
3000 accesses per second to the same segment, it will  
take more than 10 years to reach the endurance limit.  
Endurance  
Internally, a FRAM operates with a read and restore  
mechanism. Therefore, endurance cycles are applied  
for each read or write cycle. The FRAM architecture  
is based on an array of rows and columns. Rows are  
Rev. 3.2  
Feb. 2011  
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