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FM22L16 参数 Datasheet PDF下载

FM22L16图片预览
型号: FM22L16
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mbit的FRAM存储器 [4Mbit FRAM Memory]
分类和应用: 存储
文件页数/大小: 15 页 / 190 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM22L16  
Software Write Protect Timing  
That is, operating the FM22L16 with /CE toggling  
low on every address is perfectly acceptable.  
SRAM Drop-In Replacement  
The FM22L16 has been designed to be a drop-in  
replacement for standard asynchronous SRAMs. The  
device does not require /CE to toggle for each new  
address. /CE may remain low indefinitely. While /CE  
is low, the device automatically detects address  
changes and a new access is begun. This functionality  
allows /CE to be grounded as you might with an  
SRAM. It also allows page mode operation at speeds  
up to 40MHz. Note that if /CE is tied to ground,  
the user must be sure /WE is not low at powerup  
or powerdown events. If /CE and /WE are both  
low during power cycles, data corruption will  
occur.  
The /UB and /LB byte select pins are active for both  
read and write cycles. They may be used to allow the  
device to be wired as a 512Kx8 memory. The upper  
and lower data bytes can be tied together and  
controlled with the byte selects. Individual byte  
enables or the next higher address line A(18) may be  
available from the system processor.  
For applications that require the lowest power  
consumption, the /CE signal should be active only  
during memory accesses. The FM22L16 draws IDD  
supply current while /CE is low, even if addresses and  
control signals are static. While /CE is high, the  
device draws no more than the maximum standby  
current ISB.  
Figure 3. FM22L16 Wired as 512Kx8  
The FM22L16 is backward compatible with the  
1Mbit FM20L08 and 256Kbit FM18L08 devices.  
Rev. 1.0  
Mar. 2007  
Page 7 of 15