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FM21LD16-60-BGTR 参数 Datasheet PDF下载

FM21LD16-60-BGTR图片预览
型号: FM21LD16-60-BGTR
PDF下载: 下载PDF文件 查看货源
内容描述: 2Mbit的F-RAM存储器 [2Mbit F-RAM Memory]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 14 页 / 217 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM21LD16-60-BGTR的Datasheet PDF文件第5页浏览型号FM21LD16-60-BGTR的Datasheet PDF文件第6页浏览型号FM21LD16-60-BGTR的Datasheet PDF文件第7页浏览型号FM21LD16-60-BGTR的Datasheet PDF文件第8页浏览型号FM21LD16-60-BGTR的Datasheet PDF文件第10页浏览型号FM21LD16-60-BGTR的Datasheet PDF文件第11页浏览型号FM21LD16-60-BGTR的Datasheet PDF文件第12页浏览型号FM21LD16-60-BGTR的Datasheet PDF文件第13页  
FM21LD16 - 128Kx16 FRAM  
Read Cycle AC Parameters (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified)  
Symbol Parameter  
Min  
110  
-
-
20  
-
Max  
-
60  
110  
-
25  
-
-
Units  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
tRC  
Read Cycle Time  
tCE  
Chip Enable Access Time  
Address Access Time  
Output Hold Time  
Page Mode Address Access Time  
Page Mode Output Hold Time  
Chip Enable Active Time  
tAA  
tOH  
tAAP  
tOHP  
tCA  
tPC  
5
60  
50  
-
0
60  
-
-
-
-
Precharge Time  
-
20  
-
tBA  
tAS  
tAH  
tOE  
tHZ  
tOHZ  
tBHZ  
/UB, /LB Access Time  
Address Setup Time (to /CE low)  
Address Hold Time (/CE-controlled)  
Output Enable Access Time  
Chip Enable to Output High-Z  
Output Enable High to Output High-Z  
/UB, /LB High to Output High-Z  
-
15  
10  
10  
10  
ns  
ns  
ns  
1
1
1
Write Cycle AC Parameters (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified)  
Symbol Parameter  
tWC Write Cycle Time  
tCA  
tCW  
tPC  
tPWC  
tWP  
Min  
110  
60  
60  
50  
25  
16  
0
Max  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
Chip Enable Active Time  
Chip Enable to Write Enable High  
Precharge Time  
Page Mode Write Enable Cycle Time  
Write Enable Pulse Width  
tAS  
Address Setup Time (to /CE low)  
Page Mode Address Setup Time (to /WE low)  
Page Mode Address Hold Time (to /WE low)  
Write Enable Low to /CE High  
/UB, /LB Low to /CE High  
Write Enable Low to A(16:2) Change  
A(16:2) Change to Write Enable High  
/UB, /LB Setup Time (to /CE low)  
/UB, /LB Hold Time (to /CE high)  
Data Input Setup Time  
tASP  
tAHP  
tWLC  
tBLC  
tWLA  
tAWH  
tBS  
8
15  
25  
25  
25  
110  
2
0
14  
0
tBH  
tDS  
tDH  
Data Input Hold Time  
-
10  
-
-
-
tWZ  
tWX  
tWS  
Write Enable Low to Output High Z  
Write Enable High to Output Driven  
Write Enable to /CE Low Setup Time  
Write Enable to /CE High Hold Time  
-
10  
0
1
1
2
2
tWH  
0
Notes  
1
2
This parameter is characterized but not 100% tested.  
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. The parameters tWS and tWH  
are not tested.  
Capacitance (TA = 25° C , f=1 MHz, VDD = 3.3V)  
Symbol  
CI/O  
CIN  
Parameter  
Input/Output Capacitance (DQ)  
Input Capacitance  
Min  
-
-
Max  
8
6
Units  
pF  
pF  
Notes  
Rev. 1.0  
Dec. 2009  
Page 9 of 14