AC Test Load and Waveforms
V Timing Reference Point at V and V
IN IL IH
Load Circuit
Input Waveforms
+ 5.0 (+3.3 Volt Option)
V
V
IH
IH
(5.0 volt)
R
= 828Ω
1
(3.3 Volt Option)
R
= 1178Ω
1
Output
V
V
IL
IL
C = 50pf
L
(5.0 volt)
R
= 295Ω
GND
2
R
= 868Ω
(3.3 Volt Option)
≤5ns
≤5ns
2
Absolute Maximum Ratings
(Beyond Which Permanent Damage Could Result)
Capacitance
Description
Max
6pf, 7pf(1)
Pins
3.3V Option
Rating
Description
Ratings
- 1 ~ 7v
- 1 ~ 7v
- 1 ~ 7v
A
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Output Capacitance
0-9
Input Voltage (V )
- .5 ~ 4.6v
- .5 ~ 4.6v
- .5 ~ 4.6v
IN
7pf, 10pf(1) A , /CAL, /RE, W/R, /WE, /F, /S
10
Output Voltage (VOUT
)
/G
D
2pf
6pf
6pf
Power Supply Voltage (V )
CC
Ambient Operating Temperature (TA)
Storage Temperature (TS)
-40 ~ 85°C -40 ~ 85°C
-55 ~ 150°C -55 ~ 150°C
Q
(1) +5 V, DM2200-15 only.
Static Discharge Voltage
(Per MIL-STD-883 Method 3015)
Class 1
20mA
Class 1
50mA
Short Circuit O/P Current (IOUT
)
Electrical Characteristics
T = 0 to 70°C (Commercial); -40 to 85°C (Industrial)
A
3.3V Option
Symbol
Parameters
Max
Min
Test Conditions
Max
Min
V
Supply Voltage
3.0V
3.6V
4.75V
5.25V
Vcc+0.5V
0.8V
All Voltages Referenced to V
SS
CC
V
Input High Voltage
Input Low Voltage
Output High Level
Output Low Level
2.0V
Vss-0.3V
2.4V
V +0.3V 2.4V
IH
CC
V
0.8V Vss-0.5V
2.4V
IL
VOH
VOL
Ii(L)
IOUT = - 5mA (-2ma For 3.3 Volt Option)
IOUT = 4.2mA (2ma For 3.3 Volt Option)
0.4V
0.4V
10µA
10µA
Input Leakage Current
Output Leakage Current
-5µA
-5µA
5µA
5µA
-10µA
-10µA
OV ≤ V ≤ Vcc + 0.5 Volts
IN
IO(L)
O ≤ VI/O ≤ Vcc
Symbol
Operating Current
Random Read
33MHz Typ (1)
-15 Max
-12 Max
Test Condition
Notes
ICC1
110mA
65mA
55mA
135mA
50mA
1mA
225mA
145mA
110mA
190mA
135mA
1mA
180mA /RE, /CAL, and Addresses Cycling: tC = tC Minimum
115mA /CAL and Addresses Cycling: tPC = tPC Minimum
2, 3, 5
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
Fast Page Mode Read
Static Column Read
Random Write
2, 4, 5
2, 4, 5
2, 3
90mA
Addresses Cycling: tSC = tSC Minimum
/RE, /CAL, /WE, and Addresses Cycling: tC = tC Minimum
150mA
Fast Page Mode Write
105mA /CAL, /WE, and Addresses Cycling: tPC = tPC Minimum
2, 4
Standby
1mA
All Control Inputs Stable ≥ VCC - 0.2V, Output Driven
Self-Refresh
Option (-L)
/S, /F, W/R, /WE, and A0-10 at ≥ VCC - 0.2V
/RE and /CAL at ≤ VSS + 0.2V, I/O Open
200 µA
30mA
200 µA
—
200 µA
—
ICCT
1
Average Typical
See “Estimating EDRAM Operating Power” Application Note
Operating Current
(1) “33MHz Typ” refers to worst case I expected in a system operating with a 33MHz memory bus. See power applications note for further details. This parameter is not 100% tested
CC
or guaranteed. (2) I is dependent on cycle rates and is measured with CMOS levels and the outputs open. (3) I is measured with a maximum of one address change while
CC
CC
/RE = V . (4) I is measured with a maximum of one address change while /CAL = V . (5) /G is high.
IL
CC
IH
1-5
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
