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P4C1024SSPT 参数 Datasheet PDF下载

P4C1024SSPT图片预览
型号: P4C1024SSPT
PDF下载: 下载PDF文件 查看货源
内容描述: 高速128K ×8 CMOS静态RAM [HIGH SPEED 128K X 8 CMOS STATIC RAM]
分类和应用:
文件页数/大小: 14 页 / 224 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1024  
MAXIMUM RATINGS(1)  
Symbol  
Parameter  
Value  
Unit  
Symbol  
Parameter  
Value  
Unit  
VCC  
Power Supply Pin with  
Respect to GND  
–0.5 to +7  
V
TBIAS  
Temperature Under  
Bias  
–55 to +125  
°C  
Terminal Voltage with  
Respect to GND  
(up to 7.0V)  
–0.5 to  
TSTG  
PT  
IOUT  
Storage Temperature  
Power Dissipation  
DC Output Current  
–65 to +150  
°C  
W
mA  
VTERM  
TA  
VCC +0.5  
V
1.0  
50  
Operating Temperature –55 to +125 °C  
CAPACITANCES(4)  
RECOMMENDED OPERATING  
VCC = 5.0V, TA = 25°C, f = 1.0MHz  
TEMPERATURE AND SUPPLY VOLTAGE  
Ambient  
Grade(2)  
GND  
Symbol  
Parameter  
Conditions Typ. Unit  
VCC  
Temperature  
Military  
Industrial  
Commercial  
5.0V ± 10%  
5.0V ± 10%  
5.0V ± 10%  
CIN  
COUT  
–55°C to +125°C  
–40°C to +85°C  
0°C to +70°C  
0V  
0V  
0V  
VIN = 0V  
VOUT = 0V  
pF  
pF  
Input Capacitance  
Output Capacitance  
8
10  
DC ELECTRICAL CHARACTERISTICS  
Over recommended operating temperature and supply voltage(2)  
P4C1024  
P4C1024L  
Symbol  
Parameter  
Test Conditions  
Unit  
Min  
Max  
Min  
Max  
2.2  
–0.5(3)  
VCC +0.5  
2.2  
–0.5(3)  
VCC +0.5  
VIH  
VIL  
Input High Voltage  
Input Low Voltage  
V
V
V
0.8  
0.8  
VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5  
–0.5(3)  
VHC  
VLC  
CMOS Input High Voltage  
CMOS Input Low Voltage  
0.2  
–1.2  
–0.5(3)  
2.4  
0.2  
–1.2  
V
V
VCD  
VOL  
VCC = Min., IIN = –18 mA  
IOL = +8 mA, VCC = Min.  
Input Clamp Diode Voltage  
Output Low Voltage  
V
0.4  
0.4  
(TTL Load)  
Output High Voltage  
(TTL Load)  
VOH  
ILI  
IOH = –4 mA, VCC = Min.  
VCC = Max.  
V
2.4  
Mil.  
–10  
–5  
+10  
+5  
–5  
+5  
Input Leakage Current  
µA  
n/a  
n/a  
VIN = GND to VCC  
VCC = Max., CE = VIH,  
Ind./Com’l.  
Mil.  
–10  
–5  
+10  
+5  
–5  
+5  
µA  
ILO  
Output Leakage Current  
n/a  
n/a  
VOUT = GND to VCC Ind./Com’l.  
___  
___  
___  
___  
mA  
CE1 VIH or  
CE2 VIL,  
Mil.  
35  
30  
25  
Ind./Com’l.  
n/a  
Standby Power Supply  
ISB  
VCC= Max,  
Current (TTL Input Levels)  
f = Max., Outputs Open  
___  
___  
___  
___  
25  
20  
2
mA  
CE1 VHC or  
Mil.  
Ind./Com’l.  
Standby Power Supply  
Current  
n/a  
CE2 VLC,  
ISB1  
VCC= Max,  
(CMOS Input Levels)  
f = 0, Outputs Open  
VIN VLC or VIN VHC  
Notes:  
periods may affect reliability.  
1. Stresses greater than those listed under MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAXIMUM rating conditions for extended  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
3. Transient inputs with VIL and IIL not more negative than –3.0V and  
–100mA, respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
Document # SRAM124 REV A  
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