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P4C1024-17J3C 参数 Datasheet PDF下载

P4C1024-17J3C图片预览
型号: P4C1024-17J3C
PDF下载: 下载PDF文件 查看货源
内容描述: 高速128K ×8 CMOS静态RAM [HIGH SPEED 128K X 8 CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 224 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1024  
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)(11)  
TRUTH TABLE  
AC TEST CONDITIONS  
Input Pulse Levels  
GND to 3.0V  
3ns  
1.5V  
1.5V  
See Fig. 1 and 2  
Mode  
Standby  
Standby  
CE1 CE2 OE WE I/O  
Power  
Standby  
Standby  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
H
X
X
X
High Z  
High Z  
High Z  
X
L
X
X
L
H
H
H
Active  
DOUT Disabled  
DOUT  
High Z Active  
L
L
H
H
L
X
H
L
Read  
Write  
Active  
Figure 2. Thevenin Equivalent  
Figure 1. Output Load  
* including scope and test fixture.  
Note:  
To avoid signal reflections, proper termination must be used; for  
example, a 50test environment should be terminated into a 50load  
with 1.73V (Thevenin Voltage) at the comparator input, and a 116Ω  
resistor must be used in series with DOUT to match 166(Thevenin  
Resistance).  
Because of the ultra-high speed of the P4C1024, care must be  
taken when testing this device; an inadequate setup can cause a  
normal functioning part to be rejected as faulty. Long high-  
inductance leads that cause supply bounce must be avoided by  
bringing the VCC and ground planes directly up to the contactor  
fingers. A 0.01 µF high frequency capacitor is also required  
between VCC and ground.  
Document # SRAM124 REV A  
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