P4C1049
DATA RETENTION CHARACTERISTICS (P4C1049L Military Temperature Only)
Typ.*
Max
Symbol
Parameter
TestConditons
Min
Unit
VCC = 3.0V
VCC = 3.0V
V
VDR
VCC for Data Retention
DataRetentionCurrent
3.0
2
3
ICCDR
tCDR
mA
ns
CE ≥ VCC –0.2V,
VIN ≥ VCC –0.2V
or VIN ≤ 0.2V
Chip Deselect to
0
DataRetentionTime
§
†
tR
OperationRecoveryTime
tRC
ns
*TA = +25°C
§tRC = Read Cycle Time
† This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Temperature
Symbol
Parameter
Unit
–15 –20 –25 –35 –45 –55 –70
Range
mA
180 N/A N/A N/A N/A
220 185
Commercial
ICC
Dynamic Operating Current*
185 175 N/A N/A N/A mA
N/A 190
Industrial
Military
N/A
195 185 175
170 165 mA
200
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
Document # SRAM128 REV OR
Page 3 of 12
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