P4C1048L
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Commercial (0°C to 70°C)
Supply Voltage
4.5V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
Industrial (-40°C to 85°C)
Military (-55°C to 125°C)
MAXIMUM RATINGS(a)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely
affect device reliability.
Symbol
Parameter
Min
-0.5
-0.5
-55
Max
Unit
VCC
VTERM
TA
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND (up to 7.0V)
Operating Ambient Temperature
7.0
VCC + 0.5
125
V
V
°C
STG
IOUT
ILAT
Storage Temperature
-65
150
25
°C
mA
mA
Output Current into Low Outputs
Latch-up Current
>200
CAPACITANCES(d)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Test Conditions
VIN = 0V
Max
6
Unit
Symbol
Parameter
CIN
Input Capacitance
Output Capacitance
pF
pF
VOUT = 0V
COUT
8
POWER DISSIPATION CHARACTERISTICS VS. SPEED
*
Parameter
Symbol
Temperature Range
Unit
-45
-70
-55
-100
20
25
35
20
25
35
20
25
35
20
25
35
Commercial
Industrial
Military
ICC
mA
Dynamic Operating Current
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e. CE and WE ≤ VIL (max), OE is high. Switching
inputs are 0V and 3V.
Notes:
a. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability.
b. Extended temperature operation guaranteed with 400 linear feet per minute of air flow.
c. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
d. This parameter is sampled and not 100% tested.
Document # SRAM129 REV D
Page 2 of 12
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
