P4C1041
MAXIMUMRATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7.0
V
TBIAS
TemperatureUnder
Bias
–55 to +125
°C
TerminalVoltagewith
Respect to GND
–0.5 to
VCC +0.5
TSTG
IOUT
StorageTemperature
DCOutputCurrent
–65 to +150
20
°C
VTERM
TA
V
mA
OperatingTemperature
–55 to +125 °C
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
VCC
Grade(2)
GND
Parameter
Typ.
Symbol
Conditions
Unit
Temperature
–40°C to +85°C
0°C to +70°C
VIN = 0V
pF
pF
CIN
Input Capacitance
Output Capacitance
8
8
0V
0V
5.0V ± 10%
5.0V ± 10%
Industrial
VOUT = 0V
COUT
Commercial
DC ELECTRICAL CHARACTERISTICS
Overrecommendedoperatingtemperatureandsupplyvoltage(2)
P4C1041
Symbol
Parameter
Test Conditions
Unit
Min
Max
VIH
VIL
2.2
VCC +0.5
0.8
Input High Voltage
Input Low Voltage
V
V
–0.5(3)
VOL
Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min.
IOH = –4 mA, VCC = Min.
0.4
V
VOH
Output High Voltage
(TTL Load)
2.4
-2
V
+2
+1
µA
VCC = Max.
ILI
Input Leakage Current
Output Leakage Current
VIN = GND to VCC
µA
-1
VCC = Max.,
ILO
CE = VIH,
VOUT = GND to VCC
___
40
6
mA
CE ≥ VIH
Standby Power Supply
Current (TTL Input Levels)
VCC= Max,
ISB
f = Max., Outputs Open
VIN ≥ VIH orVIN ≤ VIL
___
mA
CE ≥ VCC - 0.2V
VCC= Max,
Standby Power Supply
Current
(CMOS Input Levels)
ISB1
f = 0, Outputs Open
VIN ≥ VCC - 0.3V or
VIN ≤ 0.3V
Document # SRAM133 REV OR
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