P4C1026
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Temperature
Symbol
Parameter
Unit
Range
Commercial
Industrial
–15 –20 –25 –35
mA
mA
80
90
75
80
75
80
75
80
ICC
Dynamic Operating Current*
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL
DATA RETENTION CHARACTERISTICS
Typ.*
VCC
2.0V
Max
=
VCC
=
Symbol
Parameter
Test Conditions
Min
Unit
3.0V
2.0V 3.0V
VDR
VCC for Data Retention
Data Retention Current
2.0
V
ICCDR
tCDR
10
15
250
500
µA
ns
CE ≥ VCC –0.2V,
VIN ≥ VCC –0.2V or
VIN ≤ 0.2V
Chip Deselect to
Data Retention Time
0
†
§
tR
Operation Recovery Time
tRC
ns
*TA = +125°C
§tRC = Read Cycle Time
† This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
Document # SRAM127 REV E
Page 3 of10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
