P4C1026
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under
Bias
–55 to +125
°C
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TSTG
PT
Storage Temperature
Power Dissipation
DC Output Current
–65 to +150
°C
W
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VCC +0.5
VTERM
TA
V
1.0
50
IOUT
mA
Operating Temperature –55 to +125 °C
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Temperature
Symbol
Parameter
Conditions Typ. Unit
VCC
Grade(2)
GND
Industrial
Commercial
Military
CIN
VIN = 0V
pF
pF
Input Capacitance
Output Capacitance
7
–40°C to +85°C
0°C to +70°C
0V
0V
5.0V ± 10%
5.0V ± 10%
COUT
10
VOUT = 0V
-55°Cto+125°C
0V
5.0V ± 10%
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P4C1026
Symbol
Parameter
Test Conditions
Unit
Min
Max
VIH
VIL
Input High Voltage
2.2
VCC +0.5
V
–0.5(3)
0.8
V
V
Input Low Voltage
VHC
VLC
VCD
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
VCC –0.2
VCC +0.5
–0.5(3)
V
V
0.2
VCC = Min., IIN = –18 mA
IOL = +8 mA, VCC = Min.
–1.2
Output Low Voltage
(TTL Load)
VOL
0.4
V
V
Output High Voltage
(TTL Load)
VOH
IOH = –4 mA, VCC = Min.
2.4
–5
VCC = Max.
µA
ILI
+5
Input Leakage Current
Output Leakage Current
VIN = GND to VCC
VCC = Max., CE = VIH
VOUT = GND to VCC
ILO
–5
+5
35
µA
CE ≥ VIH
Standby Power Supply
Current (TTL Input Levels)
___
ISB
mA
VCC = Max ., f = Max., Outputs Open
CE ≥ VHC
VCINC≤ VLC or VIN ≥ VHC
Standby Power Supply
Current
(CMOS Input Levels)
___
ISB1
V
= Max., f = 0, Outputs Open
10
mA
Document # SRAM127 REV E
Page 2 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
