P4C1024L
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Unit
pF
Symbol
Parameter
Test Conditions
VIN = 0V
Max
7
CIN
Input Capacitance
VOUT = 0V
COUT
9
pF
Output Capacitance
POWER DISSIPATION CHARACTERISTICS VS. SPEED
*
**
Temperature
Symbol
Parameter
Unit
-55
-70
-55
-70
Range
mA
15
Commercial
70
70
15
ICC
Dynamic Operating Current
mA
25
Industrial
85
85
25
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE2 ≥ VIH (min), CE1 and WE ≤ VIL (max), OE is high. Switching
inputs are 0V and 3V.
**As above but @ f=1 MHz and VIL/ VIH = 0V/ VCC.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-70
-55
Parameter
Unit
ns
Symbol
Max
Min
Max
Min
tRC
Read Cycle Time
Address Access Time
55
70
55
55
70
70
ns
tAA
Chip Enable Access
Time
tAC
tOH
ns
ns
ns
Output Hold from
Address Change
5
5
Chip Enable to
Output in Low Z
tLZ
10
10
Chip Disable to
Output in High Z
tHZ
ns
ns
25
35
20
30
Output Enable Low
to Data Valid
tOE
Output Enable Low to
Low Z
tOLZ
5
0
5
0
ns
ns
Output Enable High
to High Z
tOHZ
tPU
20
55
25
70
Chip Enable to Power
Up Time
ns
ns
Chip Disable to
Power Down Time
tPD
Document # SRAM125 REV C
Page 3 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
