P4C1023/P4C1023L
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Commercial (0°C to 70°C)
Industrial (-40°C to 85°C)
Military (-55°C to 125°C)
Supply Voltage
4.5V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
MAXIMUM RATINGS
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the opera-
tional sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely affect device
reliability.
Symbol
VCC
Parameter
Min
-0.5
-0.5
-55
Max
Unit
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND (up to 7.0V)
Operating Ambient Temperature
7.0
VCC + 0.5
125
V
V
VTERM
TA
°C
STG
Storage Temperature
-65
150
25
°C
mA
mA
IOUT
ILAT
Output Current into Low Outputs
Latch-up Current
>200
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Test Conditions
Max
Unit
Parameter
Min
Output High Voltage
(I/O0 - I/O7)
V
2.4
VOH
IOH = –1mA, VCC = 4.5V
Output Low Voltage
(I/O0 - I/O7)
0.4
V
VOL
IOL = 2.1mA
2.2
VCC + 0.3
0.8
V
V
VIH
VIL
Input High Voltage
Input Low Voltage
-0.3
GND ≤ VIN ≤ VCC
Comm.
Industrial
Military
-2
-5
+2
+5
µA
ILI
Input Leakage Current
Output Leakage Current
-10
+10
-2
-5
+2
+5
µA
GND ≤ VOUT ≤ VCC
Comm.
Industrial
Military
ILO
CE1 ≥ VIH or CE2 ≤ VIL
-10
+10
VCC Current
VCC = 5.5V, IOUT = 0 mA
CE1 = VIH or CE2 = VIL
ISB
3
mA
µA
TTL Standby Current
(TTL Input Levels)
V
Current
VCC = 5.5V, IOUT = 0 mA
CE1 ≥ VCC -0.2V, CE2 ≤ 0.2V
CCMCOS Standby Current
(CMOS Input Levels)
ISB1
100
Document # SRAM126 REV OR
Page 2 of 11
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
