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P4C1023-55CWI 参数 Datasheet PDF下载

P4C1023-55CWI图片预览
型号: P4C1023-55CWI
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗128K ×8单芯片使能CMOS静态RAM [LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 336 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C1023-55CWI的Datasheet PDF文件第1页浏览型号P4C1023-55CWI的Datasheet PDF文件第2页浏览型号P4C1023-55CWI的Datasheet PDF文件第3页浏览型号P4C1023-55CWI的Datasheet PDF文件第4页浏览型号P4C1023-55CWI的Datasheet PDF文件第6页浏览型号P4C1023-55CWI的Datasheet PDF文件第7页浏览型号P4C1023-55CWI的Datasheet PDF文件第8页浏览型号P4C1023-55CWI的Datasheet PDF文件第9页  
P4C1023/P4C1023L  
AC CHARACTERISTICS - WRITE CYCLE  
(Over Recommended Operating Temperature & Supply Voltage)  
-55  
-70  
Symbol  
tWC  
Parameter  
Unit  
ns  
Min  
Max  
Min  
Max  
Write Cycle Time  
55  
70  
Chip Enable Time  
to End of Write  
Address Valid to  
End of Write  
tCW  
50  
50  
0
60  
60  
0
ns  
tAW  
tAS  
tWP  
tAH  
ns  
ns  
ns  
Address Set-up Time  
Write Pulse Width  
Address Hold Time  
40  
50  
0
0
ns  
Data Valid to End  
of Write  
tDW  
tDH  
tWZ  
25  
0
30  
0
ns  
ns  
ns  
Data Hold Time  
Write Enable to  
Output in High Z  
25  
30  
Output Active from  
End of Write  
tOW  
5
5
ns  
WRITE CYCLE NO. 1 (WE CONTROLLED)(6)  
Notes:  
6. CE and WE are LOW for WRITE cycle.  
7. OE is LOW for this WRITE cycle to show twz and tow.  
8. Write Cycle Time is measured from the last valid address to the first transitioning address.  
Document # SRAM126 REV OR  
Page 5 of 11