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P4C1023-55CM 参数 Datasheet PDF下载

P4C1023-55CM图片预览
型号: P4C1023-55CM
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗128K ×8单芯片使能CMOS静态RAM [LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 336 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C1023-55CM的Datasheet PDF文件第2页浏览型号P4C1023-55CM的Datasheet PDF文件第3页浏览型号P4C1023-55CM的Datasheet PDF文件第4页浏览型号P4C1023-55CM的Datasheet PDF文件第5页浏览型号P4C1023-55CM的Datasheet PDF文件第7页浏览型号P4C1023-55CM的Datasheet PDF文件第8页浏览型号P4C1023-55CM的Datasheet PDF文件第9页浏览型号P4C1023-55CM的Datasheet PDF文件第10页  
P4C1023/P4C1023L  
TIMING WAVEFORM OF WRITE CYCLE NO.2 (CE CONTROLLED)(6)  
TRUTH TABLE  
AC TEST CONDITIONS  
I/O  
High Z  
High Z  
DOUT  
Power  
Standby  
Active  
Mode  
Standby  
DOUT Disabled  
CE OE WE  
Input Pulse Levels  
GND to 3.0V  
H
L
L
L
X
H
L
X
H
H
L
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
1.5V  
Read  
Write  
Active  
Active  
X
DIN  
See Figures 1 and 2  
* including scope and test fixture.  
Note:  
To avoid signal reflections, proper termination must be used; for  
example, a 50test environment should be terminated into a 50Ω  
load with 1.77V (Thevenin Voltage) at the comparator input, and a  
589resistor must be used in series with DOUT to match 639Ω  
(Thevenin Resistance).  
Because of the high speed of the P4C1023L, care must be taken when  
testing this device; an inadequate setup can cause a normal function-  
ing part to be rejected as faulty. Long high-inductance leads that cause  
supply bounce must be avoided by bringing the VCC and ground planes  
directly up to the contactor fingers. A 0.01 µF high frequency capacitor  
is also required between VCC and ground.  
Document # SRAM126 REV OR  
Page 6 of 11