P3C1256L - 32K x 8 STATIC CMOS RAM
DATA RETEꢀTIOꢀ CHARACTERISTICS
Typ.*
VCC
Max
VCC =
=
Sym
Parameter
Test Conditions
Min
Unit
2.0V
3.0V
2.0V
3.0V
VDR
VCC for Data Retention
Data Retention Current
2.0
V
ICCDR
10
15
80
120
µA
CE ≥ VCC - 0.2V,
VIN ≥ VCC - 0.2V
or VIN ≤ 0.2V
Chip Deselect to Data Reten-
tion Time
tCDR
0
ns
ns
†
§
tR
Operation Recovery Time
tRC
* TA = +25°C
tRC§ = Read Cycle Time
† = This parameter is guaranteed but not tested.
DATA RETEꢀTIOꢀ WAVEFORM
Document # SRAM143 REV A
Page 7