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P3C1256L70SNC 参数 Datasheet PDF下载

P3C1256L70SNC图片预览
型号: P3C1256L70SNC
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, PLASTIC, SOIC-28]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 11 页 / 729 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1256L
LOW POWER 32K x 8
STATIC CMOS RAM
FEATURES
V
CC
Current (Commercial/Industrial)
— Operating: 70mA/85mA
— CMOS Standby: 100µA/100µA
Access Times
—55/70/85
Wide Range Power Supply: 2.7V to 3.6V
Easy Memory Expansion Using
CE
and
OE
Inputs
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Automatic Power Down
Packages
— 28-Pin 600 mil DIP
— 28-Pin 330 mil SOP
— 28-Pin TSOP
DESCRIPTIOn
The P3C1256L is a 262,144-bit low power CMOS
static RAM organized as 32Kx8. The CMOS memory
requires no clocks or refreshing, and has equal access and
cycle times. Inputs are fully TTL-compatible. The RAM
operates with a wide range power supply (2.7V to 3.6V).
Access times of 55 ns and 70 ns are available. CMOS is
utilized to reduce power consumption to a low level.
The P3C1256L device provides asynchronous operation
with matching access and cycle times. Memory locations
are specified on address pins A
0
to A
14
. Reading is accom-
plished by device selection (CE and output enabling (OE)
while write enable (WE) remains HIGH. By presenting the
address under these conditions, the data in the addressed
memory location is presented on the data input/output pins.
The input/output pins stay in the HIGH Z state when either
CE
or
OE
is HIGH or
WE
is LOW.
FUnCTIOnAL BLOCk DIAgRAM
PIn COnFIgURATIOnS
DIP (P6), SOP (S11-3)
TOP VIEW
Document #
SRAM143
REV A
Revised October 2011