P3C1041
MAXIMUMRATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
VCC
Power Supply Pin with
Respect to GND
–0.5 to +4.6
V
TBIAS
TemperatureUnder
Bias
–55 to +125
°C
TerminalVoltagewith
Respect to GND
–0.5 to
TSTG
IOUT
StorageTemperature
DCOutputCurrent
–65 to +150
20
°C
mA
VTERM
TA
VCC +0.5
V
OperatingTemperature
–55 to +125 °C
CAPACITANCES(4)
RECOMMENDED OPERATING
VCC = 3.3V, TA = 25°C, f = 1.0MHz
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
VCC
Grade(2)
GND
Parameter
Typ.
Symbol
Conditions
Unit
Temperature
–40°C to +85°C
0°C to +70°C
VIN = 0V
pF
pF
CIN
Input Capacitance
Output Capacitance
8
8
0V
0V
3.3V ± 0.3V
3.3V ± 0.3V
Industrial
Commercial
VOUT = 0V
COUT
DC ELECTRICAL CHARACTERISTICS
Overrecommendedoperatingtemperatureandsupplyvoltage(2)
P3C1041
Symbol
Parameter
Test Conditions
Unit
Min
Max
VIH
VIL
2.0
–0.3(3)
VCC +0.3
Input High Voltage
Input Low Voltage
V
V
0.8
VOL
Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min.
IOH = –4 mA, VCC = Min.
0.4
V
VOH
Output High Voltage
(TTL Load)
2.4
-1
V
+1
+1
µA
VCC = Max.
VIN = GND to VCC
ILI
Input Leakage Current
Output Leakage Current
µA
-1
VCC = Max.,
CE = VIH,
ILO
VOUT = GND to VCC
___
40
10
mA
CE ≥ VIH
VCC= Max,
f = Max., Outputs Open
VIN ≥ VIH orVIN ≤ VIL
Standby Power Supply
ISB
Current (TTL Input Levels)
___
mA
CE ≥ VCC - 0.2V
VCC= Max,
Standby Power Supply
Current
ISB1
f = 0, Outputs Open
VIN ≥ VCC - 0.3V or
VIN ≤ 0.3V
(CMOS Input Levels)
Document # SRAM130 REV OR
Page 2 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
