P3C1021
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 3.3V ± 0.3V, All Temperature Ranges)(2)
-10
-12
-15
-20
Parameter
Unit
Sym.
Max
Min
10
8
Max
Min
12
9
Max
Min
15
Min
20
Max
tWC
tCW
Write Cycle Time
ns
ns
Chip Enable Time to End of
Write
10
12
tAW
tAS
tWP
tAH
Address Valid to End of Write
8
9
10
12
ns
Address Set-up Time to Write
Start
0
7
0
0
8
0
0
10
0
0
12
0
ns
ns
ns
Write Pulse Width
AddressHoldTime
tDW
5
0
8
0
Data Valid to End of Write
ns
6
0
10
0
tDH
tWZ
DataHoldTime
ns
ns
Write Enable to Output in High Z
5
6
7
8
tLZWE WE High to Low Z
tBW Byte Enable to End of Write
3
7
3
8
3
9
3
ns
ns
10
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (CE CONTROLLED)
Document # SRAM134 REV OR
Page 5 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
