PACE 1757 M/ME
DC ELECTRICAL SPECIFICATIONS (Continued)
(Over recommended operating conditions)
Symbol
Parameter
Min
Typ.
Max Unit
Conditions
VIN=GND
CC=Max
IIL
Input LOW current except IB0-IB15, EDC0-
EDC ,
,
BUS BUSY BUS LOCK
,
V
-10
µA
5
EXT ADR0-EXT ADR7, TEST ON
Input LOW current TEST ON
-500
-50
VIN=VCC
Input LOW current IB0-IB15, EDC0-EDC5,
VCC=Max
µA
,
BUS BUSY BUS LOCK
,
EXT ADR0-EXT ADR7
Output 3-state current Except SINGERR,
STRBA
Output 3-state current SINGERR, STRBA
IOZH
V
V
OUT=2.4V
CC=Max
50
µA
µA
500
-50
Output 3-state current Except
STRBD
IOZL
VOUT=0.5V
CC=Max
V
Output 3-state current
STRBD
-500
Quiescent Power Supply Current
(CMOS Input Levels)
ICCQC
VIN < 0.2V or
> VCC -0.2V, f=0Hz
Outputs open
VCC=Max
80
mA
mA
Quiescent Power Supply Current
(TTL Levels)
ICCQT
VIN=3.4V, All inputs,
f=0Hz
Outputs open
210
V
CC=Max
Dynamic Power Supply Current f=20 MHz
ICCD
TTL
VIN < 0.8V or > 3.4V,
Outputs open
280
310
325
340
f=30 MHz
f=35 MHz
f=40 MHz
mA
V
CC=Max
Dynamic Power Supply Current f=20 MHz
ICCD
VIN < 0.2V or
150
180
195
210
f=30 MHz
f=35 MHz
f=40 MHz
> VCC -0.2V
Outputs open,
VCC=Max
mA
mA
IOS
Output Short Circuit Current1
(one output shorted at a time)
V
V
OUT=GND
CC=Max
-25
Input Capacitance3
5
9
pF
pF
Inputs Only
CIN
COUT Output Capacitance3
Outputs (includes I/O
Buffers)
Note 1: Duration of the short should not exceed one second.
Note 2: V =-3.0V for pulse widths less than or equal to 20ns.
IL
Note 3: This parameter is set by design and not tested.
Do c um e nt # MICRO-10 REV B
Pa g e 4 o f 34
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
